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Nitrogen-doped Graphene Electrochemical Sensor for Selenium (IV) in Water

机译:水中硒(IV)的氮掺杂石墨烯电化学传感器

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In this study, the electrochemical detection of Se(IV) on a glassy carbon electrode (GCE) modified withnitrogen-doped graphene (NG) is reported. NG was synthesized from graphene oxide (GO) by thermalannealing of GO in ammonia. Structural and morphological studies of the synthesized NG wereconducted using field emission scanning electron microscopy (FESEM), Raman spectroscopy, highresolution-transmission electron microscopy (HR-TEM), Fourier Transform -infrared spectroscopy (FT-IR) and a CHNS analyzer. Electrochemical characterization of the unmodified GCE and the NGmodified GCE (GCE-NG) was conducted using cyclic voltammetry (CV) and electrochemicalimpedance spectroscopy (EIS). The newly developed GCE-NG sensor demonstrated improvedelectrochemical properties when compared to the bare GCE. Square wave anodic stripping voltammetry(SWASV) was employed to optimize the proposed sensors’ detection parameters: 0.1 M HClO 4supporting electrolyte, -0.8 V deposition potential and 50 s deposition. The calibration graph of Se(IV)concentrations and current response demonstrated linearity during the calibration of the sensor in theconcentration range 1 – 120 ppb, with a limit of detection (LOD) of 0.092 ppb. The proposedelectrochemical sensor was applied in the analysis of real water samples and inductively coupled plasma-optical emission spectroscopy (ICP-OES) was used to validate the results.
机译:在这项研究中,报道了用掺杂氮的石墨烯(NG)修饰的玻碳电极(GCE)上电化学检测Se(IV)。 NG是通过GO在氨中进行热退火而由氧化石墨烯(GO)合成的。使用场发射扫描电子显微镜(FESEM),拉曼光谱,高分辨率透射电子显微镜(HR-TEM),傅里叶变换红外光谱(FT-IR)和CHNS分析仪进行了合成NG的结构和形态研究。使用循环伏安法(CV)和电化学阻抗谱(EIS)对未修饰的GCE和NG修饰的GCE(GCE-NG)进行电化学表征。与裸露的GCE相比,新开发的GCE-NG传感器具有改善的电化学性能。方波阳极溶出伏安法(SWASV)用于优化拟议的传感器的检测参数:0.1 M HClO 4支持电解质,-0.8 V沉积电势和50 s沉积。 Se(IV)浓度和电流响应的校准曲线在浓度范围为1 – 120 ppb的传感器校准过程中显示出线性,检测限(LOD)为0.092 ppb。提出的电化学传感器用于实际水样的分析,并使用电感耦合等离子体发射光谱法(ICP-OES)验证结果。

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