首页> 外文期刊>International Journal of Electrochemical Science >The Cause Analysis of the Incomplete Semi-Circle Observed in High Frequency Region of EIS Obtained from TEL-Covered Pure Copper
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The Cause Analysis of the Incomplete Semi-Circle Observed in High Frequency Region of EIS Obtained from TEL-Covered Pure Copper

机译:TEL覆盖纯铜在EIS高频区域观测到的半圆不完整的原因分析

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The occurrence of the incomplete capacitive semi-circle in the high frequency region ofelectrochemical impedance spectra was studied using thin electrolyte layer-covered two-electrodesystem. Thin electrolyte layer was made by evenly depositing NaCl particles onto the electrode surfaceo and subsequently exposing to humid pure air with relative humidity of 84% and 25 C. The incompletecapacitive semi-circle in the high frequency region was observed in low NaCl deposition density andin longer exposure duration of high NaCl deposition density. The occurrence of this incompletecapacitive semi-circle is decided by the nonuniformity of the current distribution on the electrodesurface.
机译:利用薄电解质层覆盖的两电极系统研究了电化学阻抗谱高频区域中不完全电容半圆的出现。通过将NaCl颗粒均匀地沉积在电极表面上,然后暴露于相对湿度为84%和25 C的潮湿纯净空气中来制成薄电解质层。在低NaCl沉积密度和更长的时间内观察到高频区域的不完全电容半圆高NaCl沉积密度的暴露时间。该不完全电容性半圆形的出现取决于电极表面上电流分布的不均匀性。

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