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K-band 100.8 mW beamforming SOC with 249.8 ?± 22.8 pico-second group-delay in 0.13 ?μm CMOS

机译:K波段100.8 mW波束成形SOC,在0.13μmCMOS中具有249.8?±22.8皮秒的群延迟

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A K-band four-element beamforming system-on-chip (SOC) is presented. In the SOC, the attenuators and the phase shifters, designed in the reflection topology, are realized by two types of the on-chip synthetic transmission lines. The cascode amplifier, as the first stage in the receiving path, provides a gain of 20 dB to compensate all the losses of the passive components, and use dual feedback loops to minimize the group delay variation. The SOC prototype is fabricated by using 0.13 ?μm CMOS technology, and characterized through the on-wafer measurements. The measured input and output return loss are less than a??9.8 and a??14.8 dB in the 50 ?? system. The total receiving gain and the noise figure are 5.9 dB and 7.5 dB, respectively. The prototype can continuously make 360?° phase shifting with root-mean-square (RMS) errors less than 1.5?° and 0.6 dB. The measured group-delay is 249.8 pico-second (ps) with a variation of ?±22.8 ps from 22 to 26 GHz. The input P1dB and IIP3 are a??19.8 dBm and a??8.3 dBm at 24 GHz. The channel-to-channel isolation is higher than 31.6 dB in a chip area of 0.00632 ??02 at 24 GHz.
机译:提出了一种K波段四元素波束成形片上系统(SOC)。在SOC中,以反射拓扑设计的衰减器和移相器是通过两种类型的片上合成传输线实现的。作为接收路径的第一级,共源共栅放大器提供20 dB的增益,以补偿无源元件的所有损耗,并使用双反馈环路将群时延变化降至最低。 SOC原型采用0.13μmCMOS技术制造,并通过晶圆上测量进行了表征。测得的输入和输出回波损耗在50Ω内小于a 9.8和a 14.8 dB。系统。总接收增益和噪声系数分别为5.9 dB和7.5 dB。该原型可以连续进行360°°相移,均方根(RMS)误差小于1.5°°和0.6 dB。测得的群时延为249.8皮秒(ps),从22到26 GHz的变化为±22.8 ps。在24 GHz时,输入P1dB和IIP3为a ?? 19.8 dBm和a?8.3 dBm。在24 GHz的0.00632Δ02芯片面积中,通道间隔离度高于31.6 dB。

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