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首页> 外文期刊>Asia-Pacific Journal of Science and Technology >Effect of magnetic field and electric field emission from discharge current in gold ball bonding process upon TMR heads
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Effect of magnetic field and electric field emission from discharge current in gold ball bonding process upon TMR heads

机译:金球焊工艺中放电电流产生的磁场和电场发射对TMR磁头的影响

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Tunnelling Magnetoresistive (TMR) heads in magnetic recording heads can be damaged by an electricfi eld and degraded by an external magnetic fi eld. This work presents the effects of electric-magnetic fi eld emissioncaused by a discharge current on TMR head during making electrical connection in head gimbal assembly (HGA).A bonding current was acting as an Electromagnetic Radiation (EMR) source being captured by a current probe.The effects of electric and magnetic fi elds upon TMR heads were carried out by using a fi nite-integral-basedsimulator. The electric and magnetic fi eld strength were monitored and compared with the threshold level ofTMR head technology. The simulations show that the radiated magnetic fi eld strength located at TMR heads isapproximately 0.60 Oe while the radiated electric fi eld strength caused by the discharge current is 0.14 GV/m.The dielectric strength of MgO is approximately 0.95 GV/m; therefore, the radiated electric fi eld is 14.74% ofthe breakdown level while the radiated magnetic fi eld is only 0.63% of threshold magnetic fi eld (exchange biasfi eld) of 100 Oe. In conclusion, during a gold ball bond process, the possibility of TMR heads being damagedby dielectric breakdown at MgO layer is 23.40% higher than the case of the magnetization reversal at AFM/FMinterface.
机译:磁记录头中的隧道磁阻(TMR)头可能会受到电场的损坏,并由于外部磁场而退化。这项工作介绍了在磁头万向架组件(HGA)进行电连接时,TMR磁头上的放电电流所引起的电磁场发射的影响。键合电流充当电流探针捕获的电磁辐射(EMR)源电磁场对TMR磁头的影响是通过使用基于有限积分的模拟器来实现的。监测电场强度和磁场强度,并将其与TMR磁头技术的阈值水平进行比较。模拟表明,位于TMR磁头处的辐射磁场强度约为0.60 Oe,而由放电电流引起的辐射电场强度为0.14 GV /m。MgO的介电强度约为0.95 GV / m。因此,辐射电场为击穿能级的14.74%,而辐射磁场仅为100 Oe阈值磁场(交换偏场)的0.63%。总之,在金球焊工艺中,TMR磁头在MgO层被电介质击穿损坏的可能性比在AFM / FM接口处发生磁化反转的情况要高23.40%。

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