8 MeV electron irradiation effects on light emitting diodes

摘要

The studies on the effect of electron irradiation on commercially available light emitting diodes (LEDs) have been studied in this work. The electron irradiation on LEDs made of GaAs, AlGaAs, DH AS AlGaAs, GaP, AlInGaP, GaN, and InGaN are undertaken. All the devices are irradiated under unbiased conditions. The electron irradiation effects on the current voltage, light output versus forward bias current and bias voltage characteristics of the LEDs are studied. A thermal annealing study also carried out on the irradiated LEDs having metal package