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首页> 外文期刊>Archives of Physics Research >Interpretation of vertical electrical sounding points around two boreholes at samaru college of agriculture, A.B.U., Zaria-Nigeria
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Interpretation of vertical electrical sounding points around two boreholes at samaru college of agriculture, A.B.U., Zaria-Nigeria

机译:Zaria-Nigeria A.B.U.萨玛鲁农业大学两个钻孔周围的垂直电子探测点的解释

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Vertical Electrical Sounding (VES) was carried out around a functional and non-functional borehole at the Samaru college of Agriculture, Ahmadu Bello University, Zaria-Nigeria, with the target to investigate the causes of failure of one of the boreholesThis paper focus on the VES Points taken around the two boreholes (A and B). VES Points 1, 2 and 3 were taken around borehole A, while VES Points 4 and 5 were taken around borehole B. The sounding curves for VES 1,2 and 3 shows a four-layer geoelectric structure. The first layers for the three VES Points shows a range of resistivity values of 280ohm-m to 360ohm-m. This moderately high resistivity values could be as a result of the presence of laterites. VES 4 and 5 were made around borehole B. The sounding curves indicate a 5-layer geoelectric structure. This is in fairly good agreement with the borehole log. The high resistivity values at VES Points 4 and 5 around borehole B is an indicative of low conductivity in the subsurface structures. The VES Points 1, 2 and 3 around the existing and functional borehole A has large aquifer thickness and low depth to water table. This finding is a proof that there is a correlation between the depth to basement and depth to water table. On the other hand, the VES Points 4 and 5 around the non-functional borehole B, has small aquifer thickness and large depth to water table which could be a possible reason why the borehole failed not up to two years after it was drilled.
机译:垂直电测深(VES)在Zaria-Nigeria的Ahmadu Bello大学Samaru农业学院的功能性和非功能性钻孔周围进行,目的是调查其中一个钻孔的失效原因。在两个钻孔(A和B)周围拍摄的VES点。 VES点1、2和3围绕钻孔A,而VES点4和5围绕钻孔B。VES 1,2和3的测深曲线显示了四层地电结构。三个VES点的第一层显示的电阻率值范围为280ohm-m至360ohm-m。这种中等高的电阻率值可能是由于红土的存在所致。 VES 4和5是在钻孔B周围制作的。测深曲线表明是5层地电结构。这与井眼测井非常吻合。钻孔B周围VES点4和5处的高电阻率值表示地下结构的电导率低。现有和功能良好的钻孔A周围的VES点1、2和3具有较大的含水层厚度,并且地下水位较低。这一发现证明了地下室的深度与地下水位的深度之间存在相关性。另一方面,非功能性钻孔B周围的VES点4和5具有较小的含水层厚度,且距地下水位的深度较大,这可能是钻孔后不超过两年的钻孔失败的可能原因。

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