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Studies of Physical Properties of Nano-crystalline Nickel Sulphide Thin Films Grown by Simple Chemical Routea??

机译:简单化学路线生长纳米晶态硫化镍薄膜的物理性能研究?

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Nanocrystalline Nickel Sulphide thin films were prepared using chemical bath deposition method on glass substrate. Nickel Sulphate and thiourea were used as starting chemicals. Triethanolamine (TEA) and ammonia was used as the complexing agents. In order to obtain good quality thin films preparative parameters such as concentration, temperature, deposition time, pH of solution have been optimized. Films were characterized using X-ray diffraction for crystallographic analysis. The films were shown to be nanocrystalline in nature with good uniformity. From scanning electron micrographs, the surface appeared to be comparatively granular with irregularly shaped grains. Optical properties of the films were determined from analysis of the measured absorption spectrum. The Nickel Sulphide thin films exhibited direct band gap transition with band gap energy ~2.8 eV. The films were observed to have thickness value range from 300 nm to 500 nm. Electrical properties of Nickel Sulphide film determine using two point probe method. The films are semiconducting, having room temperature resistivity of the order of ~10 Ωcm.
机译:采用化学浴沉积法在玻璃基板上制备了纳米晶硫化镍薄膜。硫酸镍和硫脲用作起始化学品。三乙醇胺(TEA)和氨水用作络合剂。为了获得高质量的薄膜,已经优化了制备参数,例如浓度,温度,沉积时间,溶液的pH。使用X射线衍射对膜进行表征,以进行晶体学分析。该膜显示出本质上具有良好均匀性的纳米晶体。从扫描电子显微镜照片看,表面似乎比较颗粒,具有不规则形状的晶粒。膜的光学性质由对测得的吸收光谱的分析确定。硫化镍薄膜表现出直接的带隙跃迁,带隙能量约为2.8 eV。观察到膜的厚度值为300nm至500nm。硫化镍膜的电性能使用两点探针法确定。薄膜是半导体,室温电阻率约为10Ωcm。

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