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Synthesis and characterization of flower-like ZnSe nanostructured thin films by chemical bath deposition (CBD) method

机译:花状ZnSe纳米结构薄膜的化学浴沉积(CBD)方法合成与表征

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Flower-like zinc selenide nanostructured thin films were successfully prepared by a chemical bath deposition method on non-conducting glass substrate in an aqueous alkaline medium using sodium selenosulphate as Se2? ion source. The as-deposited films have been characterized by X-ray diffraction (XRD), high resolution scanning electron microscopy (HRSEM), energy-dispersive X-ray analysis (EDX), optical absorption, and photoluminescence spectroscopy (PL). The XRD studies reveal that the as-deposited ZnSe thin film is nanocrystalline with a face-centered cubic phase. SEM image shows the tens to hundreds of petals are self-assembled within a single nanoflower. The direct optical band gap ‘ E g’ for as-deposited flower-like ZnSe thin films is found to be 2.80?eV. Room temperature PL measurement indicates that the as-deposited cubic ZnSe thin films have a near band edge (NBE) emission peaked at around 440?nm (2.81?eV) and broad weak band emission peak from 552?nm (2.24?eV) to 658?nm (1.88?eV). The strong NBE emission from the flower-like ZnSe nanostructured thin films reveals their potential as building for optoelectronic devices.
机译:以硒化亚硒酸钠为Se 2?离子源。沉积后的薄膜已通过X射线衍射(XRD),高分辨率扫描电子显微镜(HRSEM),能量色散X射线分析(EDX),光吸收和光致发光光谱(PL)进行了表征。 XRD研究表明,沉积后的ZnSe薄膜是纳米晶,具有面心立方相。 SEM图像显示在单个纳米花中数十至数百个花瓣是自组装的。发现沉积态的花状ZnSe薄膜的直接光学带隙'E g '为2.80?eV。室温PL测量表明,沉积后的立方ZnSe薄膜具有在440?nm(2.81?eV)处达到峰值的近带边缘(NBE)发射峰,以及从552?nm(2.24?eV)到550nm处的宽弱带发射峰。 658?nm(1.88?eV)。花状ZnSe纳米结构薄膜发出的强NBE辐射显示出它们作为光电子器件的潜力。

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