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Optoelectronic Properties of F-co-doped PTO Thin Films Deposited by Spray Pyrolysis

机译:喷雾热解沉积F共掺杂PTO薄膜的光电性能

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F-co-doped Palladium Tin Oxide (PTO) thin films were pyrolytically deposited on glass substrate at 4500C using an alcoholic precursor solution consisting of Tin (IV) Chloride (SnCl4.5H2O), Palladium Chloride (PdCl2) and Ammonium Fluoride (NH4F). A resistivity of 0.3-6.9×10-2?cm was obtained in F-co-doped PTO films prepared with a Pd content of 3.68at% and F content of 0 – 23.96at% under optimized conditions. The optical properties were studied in the UV/VIS/NIR region. The optical bandgap of the films laid in the range 3.945 – 4.014 eV. Using dispersion analysis with Drude and Kim terms, optical constants were determined from spectro-photometric measurements for films on glass.
机译:使用由氯化锡(IV)(SnCl 4 )组成的醇类前体溶液,在450°SUP> 0 C下,将F掺杂的氧化钯锡薄膜(PTO)薄膜热解沉积在玻璃基板上。 SUB> .5H 2 O),氯化钯(PdCl 2 )和氟化铵(NH 4 F)。在优化条件下,Pd含量为3.68at%,F含量为0 – 23.96at%的F掺杂PTO薄膜的电阻率为0.3-6.9×10 -2 ?cm 。在UV / VIS / NIR区域研究了光学性质。薄膜的光学带隙在3.945 – 4.014 eV范围内。使用具有Drude和Kim项的色散分析,可以通过分光光度法测量玻璃上的薄膜来确定光学常数。

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