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Influence of Semiconductor Nanocrystal Concentration on Polymer Hole Transport in Hybrid Nanocomposites

机译:半导体纳米晶体浓度对杂化纳米复合材料中聚合物空穴传输的影响

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This article investigates hole transport in poly[2-methoxy-5-(2'-ethyl-hexyloxy)-1,4-phenylene vinylene] (MEH-PPV)/CdSe colloidal quantum dot (CQD) nanocomposites using a modified time-of-flight photoconductivity technique. The measured hole drift mobilities are analyzed in the context of Bässler’s Gaussian disorder model and the correlated disorder model in order to determine the polymer internal morphology of hybrid nanocomposite thin films. This work shows that increasing the CdSe CQD concentration decreases the polymer hole mobility from ~5.9 × 10−6 cm2/Vs in an MEH-PPV film to ~8.1 × 10−8 cm2/Vs in a 20:80 (wt%) MEH-PPV:CdSe CQD nanocomposite film (measured at 25 °C and ~2 × 105 V/cm). The corresponding disorder parameters indicate increasing disruption of interchain interaction with increasing CQD concentration. This work quantifies polymer chain morphology in hybrid nanocomposite thin films and provides useful information regarding the optimal use of semiconductor nanocrystals in conjugated polymer-based optoelectronics.
机译:本文研究了聚[2-甲氧基-5-(2'-乙基-己氧基)-1,4-亚苯基亚乙烯基](MEH-PPV)/ CdSe胶体量子点(CQD)纳米复合材料中的空穴传输,方法是采用修正的时间飞行光电导技术。在Bässler的高斯无序模型和相关无序模型的背景下分析了测得的空穴漂移迁移率,以确定杂化纳米复合薄膜的聚合物内部形态。这项工作表明,提高CdSe CQD浓度会使MEH-中的聚合物空穴迁移率从〜5.9×10 - 6 cm 2 / Vs降低在20:80(wt%)MEH-PPV:CdSe CQD纳米复合材料中,PPV膜达到〜8.1×10 - 8 cm 2 / Vs膜(在25°C和〜2×10 5 V / cm下测量)。相应的失调参数表明,随着CQD浓度的增加,链间相互作用的破坏也越来越严重。这项工作量化了混合纳米复合薄膜中聚合物链的形态,并提供了有关基于共轭聚合物的光电半导体中半导体纳米晶体的最佳使用的有用信息。

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