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Simulation of Crosstalk in High-Speed Multi-Chip Modules

机译:高速多芯片模块中的串扰仿真

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摘要

Simulation results of the electrical performance at 1 GBits/sec of a number of different off-chip interconnectionarchitectures are presented with emphasis given to the dependence of crosstalk and signaldelay on the geometries and dielectric constants of the insulating layers as well as on the widths andseparations of the conductors. The results indicate that signal delay and crosstalk may be reduced byusing lowεrvalues for the dielectrics and that crosstalk may be also reduced by reducing the conductor-to-ground wire separation which simultaneously neutralises the role ofεrvalue on crosstalk and lineimpedance.
机译:给出了许多不同芯片外互连体系结构在1 GBits / sec时的电性能的仿真结果,重点是串扰和信号延迟对绝缘层的几何形状和介电常数以及绝缘层的宽度和分离度的依赖性。导体。结果表明,通过为电介质使用低εr值可以减少信号延迟和串扰,并且还可以通过减小导体到地线的间距来减少串扰,这同时抵消了εr值对串扰和线路阻抗的作用。

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