Non-Invasive Detection Method for Recycled Flash Memory Using Timing Characteristics ?

摘要

Counterfeiting electronic components is a serious problem for the security and reliability of any electronic systems. Unfortunately, the number of counterfeit components has increased considerably after the introduction of horizontal semiconductor supply chain. In this paper, we propose and experimentally demonstrate an approach for detecting recycled Flash memory. The proposed method is based on measurement of change in Flash array characteristics (such as erase time, program time, fail bit count, etc.) with its usage. We find that erase time is the best metric to distinguish a used Flash chip from a fresh one for the following reasons: (1) erase time shows minimal variation among different fresh memory blocks/chip and (2) erase time increases significantly with usage. We verify our method for a wide range of commercial off the shelf Flash chips from several vendors, technology nodes, storage density and storage type (single-bit per cell and multi-bit per cell). The minimum detectable chip usage varies from 0.05% to 3.0% of its total lifetime depending on the exact details of the chip.