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SYNTHESIS AND CHARACTERIZATION OF TERNARY CuSbS2THIN FILMS: EFFECT OF DEPOSITION TIME

机译:三元CusbS2薄膜的合成与表征:沉积时间的影响

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Thin films of CuSbS2 have been grown on glass substrate using the chemical bath deposition (CBD) technique at room temperature. The chemical bath for the deposition of CuSbS2is made up of antimony chloride (SbCl3), sodium thiosulphate (Na2S2O3) and copper chloride (CuCl2). In this present work, these films were deposited at different dip time and characterized for the structural, morphological and optical properties. These properties were studied by means of X-ray diffraction (XRD), optical microscope and optical spectrophotometer for their potential application in solar energy devices. The optical properties revealed the presence of direct band gaps with energies in the 1.30 to 2.30eV range. The result shows that deposition time influences both the optical properties and band-gap energy of the films
机译:使用化学浴沉积(CBD)技术在室温下在玻璃基板上生长了CuSbS2薄膜。沉积CuSbS2的化学浴由氯化锑(SbCl3),硫代硫酸钠(Na2S2O3)和氯化铜(CuCl2)组成。在本工作中,这些薄膜在不同的浸入时间沉积,并具有结构,形态和光学特性的特征。通过X射线衍射(XRD),光学显微镜和分光光度计研究了这些特性在太阳能设备中的潜在应用。光学性质表明存在带隙在1.30至2.30eV范围内的能量。结果表明,沉积时间同时影响薄膜的光学性能和带隙能。

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