EFFECTS OF ANNEALING ON OPTICAL AND SOLID STATE PROPERTIES OF NiS2 THIN FILMS

摘要

Thin films of Nickel Sulphide (NiS2) were grown on glass substrates at 55 oC using Chemical Bath Deposition (CBD) technique. Four samples of the films were annealed at temperatures of 100 oC, 200 oC, 300 oC and 400 oC while one sample was un-annealed to serve as a reference. The spectral absorbance and transmittance of the samples were measured using double beam UV-3101 pc scanning shimadzu spectrophotometer in the wavelength range of 200 nm – 900 nm. Other optical and solid state properties such as reflectance, absorption coefficient, index of refraction, optical conductivity and energy band gap were determined using appropriate mathematical models. The results show wide ranging variations in these optical and solid state properties due to annealing and thus provide a wide range of potential applications in the areas of solar cells, sensors, infrared detectors, prism lenses, window coatings and other components of optical systems.