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Copper-selenide and copper-telluride composites powders sintetized by ionic exchange

机译:离子交换雾化硒化铜和碲化铜复合粉

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At this research it is provide two precursor solutions of selenium ions (Q’) and tellurium ions (Q) used to success easy ways in order to synthetize composites containing mainly the one copper-selenide (CuSe) and the another copper-telluride (CuTe). By Raman spectroscopy the binary copper selenides chemical composition was detected, while from X-Ray photoelectrons spectroscopy (XPS) were observed the binding energies of Se 3d and Cu 2p3 of 53 eV and 953 eV, respectively. The Copper selenide morphology was investigated by TEM observing particles are aggregated. Also, the absorption spectrum of copper selenide corresponds to direct band gap of 2.79 eV and indirect band gap of 1.36 eV. In the same way, Raman spectroscopy of chemical composition of teineite was detected for CuTe formulation, similarly XPS expose the Te 3d region shows that the valence of Te is -2, while the Cu 3p region show valence for the copper of +1. Also, TEM images presents a nanocaterpillar and the diffraction pattern corresponding indicates orthorhombic structures for both samples (CuSe and CuTe). Finally, the absorption spectrum for copper telluride indicates a direct band gap of 3.01 eV and indirect band gap of 2.91 eV.
机译:在这项研究中,它提供了硒离子(Q')和碲离子(Q)的两种前体溶液,用于成功简便的方法,以合成主要包含一种硒化铜(CuSe)和另一种碲化铜(CuTe)的复合材料)。通过拉曼光谱法检测到二元硒化铜的化学组成,而从X射线光电子能谱仪(XPS)观察到Se 3d和Cu 2p3的结合能分别为53 eV和953 eV。通过TEM观察硒化铜的形态,观察颗粒聚集。另外,硒化铜的吸收光谱对应于2.79eV的直接带隙和1.36eV​​的间接带隙。以同样的方式,对CuTe配方检测了泰因石化学成分的拉曼光谱,类似地XPS暴露Te 3d区显示Te的化合价为-2,而Cu 3p区显示+1的铜化合价。同样,TEM图像显示出纳米毛虫,相应的衍射图样表明两种样品(CuSe和CuTe)的正交晶系结构。最后,碲化铜的吸收光谱表明直接带隙为3.01 eV,间接带隙为2.91 eV。

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