EASILY REALIZABLE HETEROJUNCTION CdS/CuInSe 2 FOR THIN FILMS PHOTOVOLTAIC APPLICATION

摘要

A heterojunction based on cadmium sulfide (CdS) deposited on copper and indium selenide (CuInSe 2 ) can be achieved b y simple, easy to implement and low cost techniques. Ho mogeneous CuInSe 2 layers were successfully deposited in an electrochemical way. The Raman and XRD analyses confirmed that the deposited films are mostly made of CuInSe 2 . Transmittance spectra analysis indicated that optical indices and gap energy correspond to those of CuInSe 2 . Chemical bath deposition of CdS onto CuInSe 2 provides an heterojunction. I(V) characteristics of Ag/CdS/CuInSe 2 /Mo structure present a curve comparable to that o f a silicon diode. Such a structure is then ready for photovoltaic application.