...
首页> 外文期刊>Bulletin of materials science >Photoelectrochemical (PEC) studies on CdSe thin films electrodeposited from non-aqueous bath on different substrates
【24h】

Photoelectrochemical (PEC) studies on CdSe thin films electrodeposited from non-aqueous bath on different substrates

机译:从非水浴在不同基材上电沉积CdSe薄膜的光电化学(PEC)研究

获取原文

摘要

Thin films of CdSe were deposited by potentiostatic mode on different substrates such as stainless steel, titanium and fluorine tina€“oxide (FTO) coated glass using non-aqueous bath. The preparative parameters were optimized to get good quality CdSe thin films. These films were characterized by X-ray diffraction (XRD), optical absorption and photoelectrochemical (PEC) techniques. XRD study revealed that the films were polycrystalline in nature with hexagonal phase. Optical absorption study showed that CdSe films were of direct band gap type semiconductor with a band gap energy of 1.8 eV. PEC study revealed that CdSe film deposited on FTO coated glass exhibited maximum values of fill factor (FF) and efficiency (e???) as compared to the films deposited on stainless steel and titanium substrate.
机译:CdSe薄膜通过恒电位模式使用非水浴在不同的基材(例如不锈钢,钛和氟氧化钛(FTO)涂层玻璃)上沉积。优化了制备参数,以获得高质量的CdSe薄膜。这些薄膜通过X射线衍射(XRD),光吸收和光电化学(PEC)技术进行了表征。 XRD研究表明该膜本质上是具有六方相的多晶。光吸收研究表明,CdSe薄膜是带隙能为1.8 eV的直接带隙型半导体。 PEC研究表明,与沉积在不锈钢和钛基体上的薄膜相比,沉积在FTO涂覆的玻璃上的CdSe薄膜表现出最大的填充因子(FF)和效率(e-)。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号