A 180 mV 81.2%-Efficient Switched-Capacitor Voltage Doubler for IoT Using Self-Biasing Deep N-Well in 16-nm CMOS FinFET

摘要

We introduce the first monolithic step-up dc–dc converter operating at deep sub-1 V (i.e., 0.18–0.4 V) that outputs significant power for Internet-of-Things with a peak power efficiency of 81.2% at 50 $ {mu }ext{W}$ output power for the 0.18-V input and 87.1% at 300 $ {mu }ext{W}$ output power for 0.4 V. It is implemented in 16-nm FinFET CMOS and uses an MOS transistor as a high-density flying capacitor for energy conversion. The capacitor is arranged in a self-biased deep N-well topology, which enhances the overall efficiency by 9.5%. An integrated time-to-digital converter verifies the dc–dc output quality.