History-aware page replacement algorithm for NAND flash-based consumer electronics

摘要

Because NAND flash memory exhibits excellent performances in terms of shock resistance, non-volatility, fast access speed, small size, and lower power consumption, it has become the dominant storage medium of consumer electronics such as smart phones and portable media players. However, these consumer electronics suffer from limited main memory. Therefore, an efficient page replacement algorithm should be proposed for consumer electronics to reclaim obsolete pages and obtain free page frames for requested pages. In this paper, a history-aware page replacement algorithm is proposed for NAND flash-based consumer electronics. The proposed page replacement algorithm adapts itself to the runtime workloads and gives each dirty page a second chance to stay in the main memory. Experimental results show that the proposed page replacement algorithm performs better than the state-of-the-art page replacement algorithms in terms of the page hit ratio, the number of write operations, and the energy consumption.