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Deformation-induced blueshift in emission spectrum of CdTe quantum dot composites

机译:CdTe量子点复合材料发射光谱中的形变诱发蓝移

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Polymer or glass films impregnated with quantum dots (QDs) have potential applications for mesoscale stress/strain sensing in the interior of materials under mechanical loading. One requirement in the development of such nanocomposite sensor materials is the establishment of calibrated relations between shifts in the emission spectrum of QD systems and the input stress/strain on the composites. Here, we use a multiscale computational framework to quantify the strain-dependent blueshift in the emission spectrum of CdTe QDs uniformly distributed in a matrix material under loading of a range of strain triaxiality. The framework, which combines the finite element method, molecular dynamics simulations and the empirical tight-binding method, captures the QD/matrix interactions, possible deformation induced phase transformations and strain-dependent band structures of the QDs. Calculations reveal that the response of the QDs is strongly dependent on state of input strain. Under hydrostatic compression, the blueshift increases monotonically with strain. Under compression with lateral/axial strain ratios between 0.0 and 0.5, the blueshift initially increases, reaches a peak at an intermediate strain, and subsequently decreases with strain. This trend reflects a competition between increases in the energy levels associated with the conduction and valence bands of the QDs. The deformation-induced blueshift is also found to be dependent on QD orientations. The averaged blueshift over all orientations for the composite under uniaxial strain condition explains the blueshift variation trend observed in laser-driven shock compression experiments. Based on the simulation result, guidelines for developing QD composites as stress/strain sensing materials are discussed. (C) 2017 Elsevier Ltd. All rights reserved.
机译:浸渍有量子点(QD)的聚合物或玻璃膜在机械载荷下对材料内部的中尺度应力/应变传感具有潜在的应用。开发这种纳米复合传感器材料的一项要求是在QD系统发射光谱的位移与复合材料上的输入应力/应变之间建立校准关系。在这里,我们使用多尺度计算框架来量化在一定应变三轴度载荷下均匀分布在基体材料中的CdTe QD发射光谱中的应变相关蓝移。该框架结合了有限元方法,分子动力学模拟和经验紧密结合方法,可捕获QD /基体相互作用,可能的形变诱导相变以及QD的应变相关能带结构。计算表明,量子点的响应很大程度上取决于输入应变的状态。在静水压力下,蓝移随应变单调增加。在横向/轴向应变比介于0.0和0.5之间的压缩情况下,蓝移首先增加,在中间应变时达到峰值,然后随应变降低。这种趋势反映了与量子点的导带和价带相关的能级增加之间的竞争。还发现由变形引起的蓝移取决于QD方向。复合材料在单轴应变条件下在所有方向上的平均蓝移解释了在激光驱动的冲击压缩实验中观察到的蓝移变化趋势。基于仿真结果,讨论了开发QD复合材料作为应力/应变传感材料的准则。 (C)2017 Elsevier Ltd.保留所有权利。

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