Validation of a Full-Chip Simulation Model for Supply Noise and Delay Dependence on Average Voltage Drop With On-Chip Delay Measurement

摘要

Power integrity is a crucial design issue for nano-meter technologies because of decreased supply voltage and increased current. We focused on gate delay variation caused by power/ground noise, and developed a full-chip simulation current model with capacitance and a variable resistor to accurately model current dependency on voltage drop. Measurement results for 90-nm technology are well reproduced in simulation. The error of average supply voltage is 0.9% in average. Measurement results also demonstrate that gate delay depends on average voltage drop.