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首页> 外文期刊>Circuits and Systems II: Express Briefs, IEEE Transactions on >LC-VCO in the 3.3- to 4-GHz Band Implemented in 32-nm Low-Power CMOS Technology
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LC-VCO in the 3.3- to 4-GHz Band Implemented in 32-nm Low-Power CMOS Technology

机译:采用32 nm低功耗CMOS技术实现的3.3至4 GHz频带中的LC-VCO

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摘要

In this brief, a conventional $LC$ voltage-controlled oscillator (LC-VCO) for Global System for Mobile Communications 900 applications is implemented in a 32-nm CMOS technology. The transition to 32-nm technology represents a big step from the technological point of view, mainly due to the introduction of high-$kappa$ dielectrics. In spite of the considered ultrascaled technology, the measured performance is aligned with recently published conventional LC-VCOs in the gigahertz range. The robustness of the VCO versus temperature and supply variation is experimentally characterized and analyzed in detail by means of circuit simulations.
机译:在本简介中,以32纳米CMOS技术实现了用于全球移动通信系统900应用的常规$ LC $压控振荡器(LC-VCO)。从技术角度来看,向32纳米技术的过渡代表了一大步,主要是由于引入了高介电常数的电介质。尽管考虑了超大规模技术,但所测得的性能仍与最近发布的千兆赫兹范围内的常规LC-VCO保持一致。 VCO随温度和电源变化的鲁棒性通过实验进行了表征,并通过电路仿真进行了详细分析。

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