Tuning of hole doping level of iodine-encapsulated single-walled carbon nanotubes by temperature adjustment

摘要

We present a simple approach of tuning the hole doping level of iodine-doped single-walled carbon nanotubes by adjusting temperature, utilizing the structural conversion of iodine species encapsulated in SWNTs.rnDue to their outstanding electronic and mechanical properties, single-walled carbon nanotubes (SWNTs) are promising materials for creating new-generation nanodevices.' The modulation of SWNTs' properties is a crucial step toward their applications.