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外文期刊>Bulletin of Materials Science
>Preparation and characterization of solid-state sintered aluminum-doped zinc oxide with different alumina contents
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Preparation and characterization of solid-state sintered aluminum-doped zinc oxide with different alumina contents
Aluminum-doped zinc oxide (AZO) ceramics with 0− 2 ·5 wt.% alumina (Al2O3) content were prepared using a solid-state reaction technique. It was found that AZO grains became finer in size and more irregular in shape than undoped ZnO as the Al2O3 content increased. Addition of Al2O3 dopant caused the formation of phase transformation stacking faults in ZnO grains. The second phase, ZnAl2O4 spinel, was observed at the grain boundaries and triple junctions, and inside the grains. In this study, a 3-inch circular Al2O3 (2 wt.%)-doped ZnO ceramic target sintered at 1500°C for 6 h has a relative density of 99·8% with a resistivity of 1·8 × 10 − 3 Ω-cm. The AZO film exhibits optical transparency of 90·3% in the visible region and shows an electrical resistivity of 2·5 × 10 − 3 Ω-cm.
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机译：采用固相反应技术制备了氧化铝含量为0〜2·5％（Al 2 O 3 ）的掺铝氧化锌（AZO）陶瓷。研究发现，随着Al 2 O 3 含量的增加，与未掺杂的ZnO相比，AZO晶粒尺寸更细，形状更不规则。 Al 2 O 3 掺杂物的加入导致ZnO晶粒形成相变堆叠缺陷。第二相ZnAl 2 O 4 尖晶石在晶界和三重结处以及晶粒内部被观察到。在这项研究中，掺有3英寸圆形Al 2 O 3 （2 wt。％）的ZnO陶瓷靶在1500°C烧结6 h具有相对密度。电阻率为99·8％，电阻率为1·8×10 − 3 Ω-cm。该AZO膜在可见光区域的光学透明性为90·3％，电阻率为2·5×10 -3 Ω·cm。
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