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首页> 外文期刊>Bulletin of Materials Science >Purification of cadmium by selective volatilization in vacuum in presence of oxide phase on its melt
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Purification of cadmium by selective volatilization in vacuum in presence of oxide phase on its melt

机译:通过在其熔体上存在氧化物相的情况下在真空中进行选择性挥发来纯化镉

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Purification of cadmium in the presence of a thin (~0·001 mm) oxide layer on the surface of the molten metal was carried out using a simple system designed and fabricated locally. The analytical results revealed that the distillation through oxide layer gave better separation for Co, Ni, Cu, Zn, Ag, Sn, Hg and Tl, when compared to the distillation without oxide layer. This was attributed due to the impurity metal oxide phases formation on the surface of the molten metal. The influence of oxygen flow time on the distillation rate of cadmium was established. There was no excess oxygen (O) retained in the distillate after two consecutive vacuum distillations through oxide route. The experiments were conducted at the level of nearly 1·5 kg a batch to study the impurities behaviour due to upscaling. The detailed chemical analysis of 58 impurity elements in Cd in presence and absence of oxide layer was carried out by glow discharge mass spectrometry (GDMS).
机译:使用在本地设计和制造的简单系统,在熔融金属表面上存在薄(〜0·001 mm)氧化层的情况下纯化镉。分析结果表明,与没有氧化物层的蒸馏法相比,通过氧化物层的蒸馏法对Co,Ni,Cu,Zn,Ag,Sn,Hg和Tl的分离效果更好。这归因于在熔融金属表面上形成的杂质金属氧化物相。建立了氧气流动时间对镉蒸馏速率的影响。通过氧化物路线连续两次连续真空蒸馏后,馏出物中没有残留过量的氧气(O)。每批将近1·5 kg的水平进行了实验,以研究由于结垢而引起的杂质行为。通过辉光放电质谱法(GDMS)对存在和不存在氧化层的镉中58种杂质元素进行了详细的化学分析。

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