Relaxation of selectively excited atoms at the surface of rare-gas doped rare-gas solids

摘要

Following primary selective ~3P_1 type excitation of rare-gas guest atoms at the surface of rare-gas host crystals two relaxation channels are observed, (ⅰ) the desorption of electronically excited guest atoms, and (ⅱ) the radiative decay of weakly bound atomic ~3P_1 and ~3P_2 type and of molecular-type surface centers. The desorption of excited atoms is ascribed to the 'cavity-ejection mechanism'. The emitting atomic-type centers consist of guest atoms in an 'on-top' geometry. Measurements have been performed on all systems with positive V_0 values.