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首页> 外文期刊>Biological Trace Element Research >Induction of DNA damage by free radicals generated either by organic or inorganic arsenic (AsIII, MMAIII, and DMAIII) in cultures of B and T lymphocytes
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Induction of DNA damage by free radicals generated either by organic or inorganic arsenic (AsIII, MMAIII, and DMAIII) in cultures of B and T lymphocytes

机译:B和T淋巴细胞培养物中有机或无机砷(AsIII ,MMAIII 和DMAIII )产生的自由基诱导的DNA损伤

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The aim of this work is based in the premise that inorganic arsenic (AsIII) and trivalentmethylated metabolites monomethylarsonous (MMAIII) and dimethylarsinous (DMAIII) participate in DNA damage through the generation of reactive oxygen species (ROS). We have utilized two lymphoblastic lines, Raji (B cells) and Jurkat (T cells), which were treated with the trivalent arsenic species (dose: 0–100 μM) and analyzed by two assays (comet assay and flow cytometry) in the determination of DNA damage and ROS effects in vivo. The results showed that the damage to the DNA and the generation of ROS are different in both cellular lines with respect to the dose of organic arsenic, and the order of damage is MMAIII
机译:这项工作的目的是基于这样的前提:无机砷(AsIII )和三价甲基化代谢物单甲基砷(MMAIII )和二甲基砷(DMAIII )通过产生活性氧参与DNA损伤。种(ROS)。我们使用了两种淋巴母细胞系Raji(B细胞)和Jurkat(T细胞),它们分别用三价砷物种(剂量:0–100μM)处理,并通过两种测定法(彗星测定法和流式细胞仪)进行了分析。体内DNA损伤和ROS的影响。结果表明,在两种细胞系中,有机砷的剂量对DNA的损伤和ROS的产生均不同,损伤顺序为MMAIII 。这一事实表明,DMAIII 并不总是像其他研究中报道的那样,具有更高的细胞毒性中间异生素。

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