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首页> 外文期刊>The Astrophysical journal >SIGNATURES OF THE s-PROCESS IN PRESOLAR SILICON CARBIDE GRAINS: BARIUM THROUGH HAFNIUM
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SIGNATURES OF THE s-PROCESS IN PRESOLAR SILICON CARBIDE GRAINS: BARIUM THROUGH HAFNIUM

机译:碳化硅前晶中s-过程的特征:钡穿过HA

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摘要

Isotopic and elemental abundance signatures in the mass range Ba through Hf have been determined in a silicon carbide-rich sample of the Murchison carbonaceous chondrite, using inductively coupled plasma mass spectrometry (ICP-MS). Despite the problem of some isobaric interferences, useful results were obtained for a number of isotopes. Disagreements between astrophysical predictions and previous results for ~(137)Ba and ~(146)Nd obtained by thermal ion-ization mass spectrometry are confirmed. Our data for Dy are more in line with predictions, however. The s-process signatures for several other elements in the rare earth element (REE) mass range were observed for the first time and are also consistent with theoretical predictions. The elemental abundance pattern shows deficit relative to production ratios of the more volatile REE, notably Yb, and, to a lesser extent, Sm and Eu. This may allow estimating an average condensation temperature of trace elements into SiC.
机译:已使用电感耦合等离子体质谱法(ICP-MS)在Murchison碳质球粒晶体的富碳化硅样品中确定了质量分数Ba至Hf的同位素和元素丰度特征。尽管存在一些同量异位干扰的问题,但仍获得了许多同位素的有用结果。证实了天文学预测与通过热离子化质谱法获得的〜(137)Ba和〜(146)Nd的先前结果之间存在分歧。但是,我们对Dy的数据与预测更为一致。首次观察到稀土元素(REE)质量范围内其他几个元素的s过程特征,并且与理论预测一致。元素丰度模式显示相对于较易挥发的REE(尤其是Yb)以及相对较小的Sm和Eu的产量比而言的亏损。这可以允许估计痕量元素到SiC中的平均冷凝温度。

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