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Anodic TiO_2 nanotube walls reconstructed: Inner wall replaced by ALD TiO_2 coating

机译:anodic tio_2纳米管墙重建:内壁由ALD TiO_2涂层替换

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摘要

A reconstruction process of TiO2 nanotube (TNT) layers towards their superior photoelectrochemical performance and photocatalytic activity is presented. At first, TNT layers (similar to 5 mu m thick, similar to 250 nm in diameter) were prepared via electrochemical anodization to obtain double-wall (DW) TNT layers. Second, a selective chemical treatment was conducted to etch the inner wall, yielding single-wall (SW) TNT layers. Third, TNT layers were coated by an additional approx. 5.5 nm, 11 nm, and 16 nm thick TiO2 coatings, respectively, using Atomic Layer Deposition (ALD). A pronounced increase in the incident photon-to-electron conversion efficiency (reaching similar to 85% at lambda - 350 nm) was achieved on SW TNT layers coated with 11 nm thick ALD coatings compared to SW without coating (similar to 35% at lambda = 350 nm). This is due to the optimal thickness of the ALD TiO2 coating that passivates surface states and improves the separation of the photogenerated charge carriers. Photocatalytic performance of SW TNT layers with 11 nm thick ALD coatings (rate constant; k = 0.1156 min(-1)) was increased by approx. 10-times compared to that of the nowadays most reported blank DW TNT layers (rate constant; k = 0.0119 min(-1)).
机译:TiO2纳米管(TNT)朝向其优越的光电化学和光催化性能的层的重建过程被呈现。起初,TNT层(类似于5微米厚,类似于在直径250纳米)通过电化学阳极氧化,以获得双层壁(DW)TNT层制备。其次,选择性的化学处理,进行蚀刻内壁,得到单壁(SW)TNT层。第三,TNT层通过一个额外的约涂覆。 5.5纳米,11纳米和16个纳米厚的二氧化钛涂层,分别使用原子层沉积(ALD)。在入射光子 - 电子转换效率(到达在拉姆达类似于85% - 350 nm)的显着增加是在涂有相比SW 11个纳米厚的ALD涂层SW TNT层实现,而不在拉姆达涂覆(类似于35% = 350纳米)。这是由于二氧化钛的ALD涂层的最佳厚度钝化表面状态,并提高光生载流子的分离。以11个纳米厚的涂层ALD SW TNT层的光催化性能(速率常数; K = 0.1156分钟(-1))增加了约10倍相比,在现今大多数报道的空白DW TNT层(速率常数; K = 0.0119分钟(-1))。

著录项

  • 来源
    《Applied Surface Science》 |2021年第30期|149306.1-149306.8|共8页
  • 作者单位

    Univ Pardubice Fac Chem Technol Ctr Mat & Nanotechnol Nam Cs Legii 565 Pardubice 53002 Czech Republic|Comenius Univ Dept Inorgan Chem Fac Nat Sci Ilkovicova 6 Bratislava 84215 Slovakia;

    Univ Pardubice Fac Chem Technol Ctr Mat & Nanotechnol Nam Cs Legii 565 Pardubice 53002 Czech Republic|Brno Univ Technol Cent European Inst Technol Purkynova 123 Brno 61200 Czech Republic;

    Univ Pardubice Fac Chem Technol Ctr Mat & Nanotechnol Nam Cs Legii 565 Pardubice 53002 Czech Republic|Brno Univ Technol Cent European Inst Technol Purkynova 123 Brno 61200 Czech Republic;

    Univ Pardubice Fac Chem Technol Ctr Mat & Nanotechnol Nam Cs Legii 565 Pardubice 53002 Czech Republic;

    Univ Pardubice Fac Chem Technol Ctr Mat & Nanotechnol Nam Cs Legii 565 Pardubice 53002 Czech Republic;

    Univ Pardubice Fac Chem Technol Ctr Mat & Nanotechnol Nam Cs Legii 565 Pardubice 53002 Czech Republic;

    Univ Pardubice Fac Chem Technol Ctr Mat & Nanotechnol Nam Cs Legii 565 Pardubice 53002 Czech Republic|Brno Univ Technol Cent European Inst Technol Purkynova 123 Brno 61200 Czech Republic;

    Univ Pardubice Fac Chem Technol Ctr Mat & Nanotechnol Nam Cs Legii 565 Pardubice 53002 Czech Republic|Brno Univ Technol Cent European Inst Technol Purkynova 123 Brno 61200 Czech Republic;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

    TiO2 nanotube layers; Single-wall; Atomic layer deposition; Photoelectrochemistry; Photocatalysis;

    机译:TiO2纳米管层;单壁;原子层沉积;光电化学;光催化;

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