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Heat of adsorption and density distribution in slit pores with defective walls: GCMC simulation studies and comparison with experimental data

机译:具有缺陷壁的缝隙孔中的吸附热和密度分布:GCMC模拟研究并与实验数据进行比较

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The adsorption behavior (capacity, density distribution and packing density) and the isosteric heat versus loading in a slit pore whose walls contain defective graphene layers are investigated in this paper. The defective wall is characterized by the extent and size of the defect. Simulation results obtained with the Grand Canonical Monte Carlo method reveal complex patterns of isosteric heat, and this complex behavior is a result of the interplay between three factors: (ⅰ) the surface heterogeneity (solid-fluid interaction, sites with varying degree of affinity), (ⅱ) fluid-fluid interaction and (ⅲ) the overlapping of potentials exerted by the two defective walls. We illustrate this with argon adsorption in pores of various sizes, and results obtained from the simulation agree qualitatively with the experimental data at 77 K on Saran microporous S600H and micro-mesoporous S84 charcoals of Beebe et al. [R.A. Beebe, B. Millard, J. Cynarski, J. Am. Chem. Soc. 75 (1953) 839]. The S600H was found to contain pores predominantly in the neighborhood of 7 A with 30% of defect and a defective size of 2.84 A. This is consistent with the argument made by Beebe et al. that this sample is a microporous solid and most pores can accommodate only one layer. The other sample, S84, has larger pores than S600H, and it is found that it has a wider pore size distribution and the pore width is centered at about 12 A.
机译:本文研究了壁上有缺陷的石墨烯层的狭缝孔中的吸附行为(容量,密度分布和堆积密度)以及等排热与载荷的关系。缺陷壁的特征在于缺陷的程度和大小。使用Grand Canonical Monte Carlo方法获得的模拟结果揭示了等排热的复杂模式,并且这种复杂的行为是三个因素之间相互作用的结果:(ⅰ)表面异质性(固液相互作用,亲和度不同的位点) ,(ⅱ)流体相互作用和(ⅲ)两个有缺陷的壁所施加的电势重叠。我们用氩气吸附在各种尺寸的孔中来说明这一点,并且从模拟获得的结果与Beebe等人的Saran微孔S600H和微中孔S84炭在77 K的实验数据定性地吻合。 [R.A. Beebe,B.Millard,J.Cynarski,J.Am。化学Soc。 75(1953)839]。发现S600H的孔主要位于7 A附近,缺陷率为30%,缺陷尺寸为2.84A。这与Beebe等人的观点一致。该样品是微孔固体,大多数孔只能容纳一层。另一个样品S84的孔比S600H的大,并且发现它的孔分布更宽,孔宽度集中在约12A。

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