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Study by EELS and EPES of the stability of InPO_4/InP system

机译:通过EELS和EPES研究InPO_4 / InP系统的稳定性

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The goal of this research is to highlight the effectiveness of associating the spectroscopic methods EELS and EPES in the study of thin film grown on substrates. We use the great sensitivity of the Electron Energy Loss Spectroscopy (EELS) and the Elastic Peak Electron Spectroscopy (EPES) to study native InPO_4 oxide of thin thickness (10 A) grown on InP by UV/ozone oxidation. By vary ing the primary energy of the electron beam and the incidence angle, we give interesting results related to the chemical and the physical analyses of InPO_4/InP system. These spectroscopic methods reveal the homogeneity of the chemical composition of lnPO_4 on the surface. Furthermore, the electron irradiation of InPO_4/InP leads to the breaking of chemical bonds between the species of InPO_4 and InP to form a new oxide In_2O_3 on the surface. We show that the heating of InPO_4/InP at 450 ℃ in UHV allows a good reconstruction of the surface with elimination of defects on the surface and at the interface. Thus, the surface becomes more stable to impede all oxidation processes due to the electron beam irradiation even for a time as long as 30 min.
机译:这项研究的目的是强调结合光谱方法EELS和EPES在研究在基板上生长的薄膜方面的有效性。我们使用电子能量损失谱(EELS)和弹性峰电子谱(EPES)的高灵敏度来研究通过UV /臭氧氧化在InP上生长的厚度很薄(10 A)的本征InPO_4氧化物。通过改变电子束的主能和入射角,我们得到了与InPO_4 / InP系统的化学和物理分析有关的有趣结果。这些光谱方法揭示了表面上InPO_4的化学组成的均质性。此外,InPO_4 / InP的电子辐照导致InPO_4和InP物种之间的化学键断裂,从而在表面上形成新的氧化物In_2O_3。我们表明,InHV_4 / InP在UHV中于450℃加热可以很好地重建表面,并消除了表面和界面上的缺陷。因此,即使是长达30分钟的时间,由于电子束照射,表面也变得更加稳定,可以阻止所有氧化过程。

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