机译:通过In-,In_(0.53)Ga_(0.47)As和GaAs MBE外延层中的I-V(电阻率),屏蔽和德拜长度,平均自由程,莫特效应和玻尔半径来进行电荷传输诊断
Institute of Electron Technology, al.Lotnikow 32/46, 02-668 Warsaw, Poland;
hydrogenic donor; impurity states; mott concentration; variable-range hopping; nonmetal-metal transition;
机译:从In_(0.53)Ga_(0.47)As / In_(0.53)Ga_(0.23)Al_(0.24)As量子阱到InAs / In_(0.53)Ga_(0.23)Al_(0.24)的激子和自由载流子的隧道注入量子破折号
机译:具有InAs / GaAs,In_(0.53)Ga_(0.47)As / InP和GaAs / GaAs的MBE外延层的电磁和电导率参数
机译:植入物自由复合通道的高性能和可靠性分析(0.53)GA_(0.47)AS / INAS / IN_(0.53)GA_(0.47)作为Δ掺杂MOSFET