Structural Properties Of Al_2o_3 Dielectrics Grown On Tin Metal Substrates By Atomic Layer Deposition

摘要

We investigated on the structural properties of Al_2O_3 dielectrics grown on TiN metal substrates using an atomic layer deposition technique with tri-methyl-aluminum and either O_3 or H_2O as the precursor and oxidant, respectively. The structural and morphological features of these films were examined by atomic force microscopy. X-ray diffraction, and X-ray photoelectron spectroscopy measurements. We find that Al_2O_3 dielectric films with the O_3 oxidant exhibit a rough morphology, a thick TiO_2 film, and a small amount of contaminants such as carbon and hydrogen. The reason for the rapid diffusion of oxygen atoms into the TiN lattice leads to the formation of TiO_2 layer on the TiN substrate. This is due to the higher oxidation potential of the O_3 compared to the H_2O.