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Comparative Study Of Electroless Copper Deposition Based On The Seed Layers Of Pd, Ptpd And Aupd

机译:基于Pd,Ptpd和Aupd种子层的化学镀铜的比较研究

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The article reports on electroless deposition of copper films onto p-silicon (100) using different seed (co-seed) layers of Pd, PtPd and AuPd. The dependence of the compositions and morphologies of different seed layers on resultant Cu films were comparatively studied in detail by atomic force microscopy (AFM), field emission scanning electron microscope (FE-SEM) and X-ray photoelectron spectroscopy (XPS). The activities of electroless copper deposition on the p-silicon (100) with different seed (co-seed) layers were evaluated by polarization curve. It is concluded that the bimetallic AuPd seed displayed the highest catalytic activity for electroless copper deposition, and followed by the order of PtPd > Pd.
机译:该文章报道了使用Pd,PtPd和AuPd的不同种子(共种)层将铜膜化学沉积到p硅(100)上。通过原子力显微镜(AFM),场发射扫描电子显微镜(FE-SEM)和X射线光电子能谱(XPS)比较详细地研究了不同种子层的组成和形态对所得铜膜的依赖性。通过极化曲线评估化学镀铜在具有不同种子(共种)层的p硅(100)上的沉积活性。结论是,双金属AuPd晶种对化学镀铜表现出最高的催化活性,其次为PtPd> Pd。

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