机译:射频功率对电感耦合等离子体刻蚀Al_(0.65)Ga_(0.35)N表面的影响
Microwave Devices and Integrated Circuits Department, Institute of Microelectronics of Chinese Academy of Sciences, No. 3, Bei-Tu-Cheng West Road, Beijing 100029, China;
rnMicrowave Devices and Integrated Circuits Department, Institute of Microelectronics of Chinese Academy of Sciences, No. 3, Bei-Tu-Cheng West Road, Beijing 100029, China;
rnMicrowave Devices and Integrated Circuits Department, Institute of Microelectronics of Chinese Academy of Sciences, No. 3, Bei-Tu-Cheng West Road, Beijing 100029, China;
rnMicrowave Devices and Integrated Circuits Department, Institute of Microelectronics of Chinese Academy of Sciences, No. 3, Bei-Tu-Cheng West Road, Beijing 100029, China;
rnMicrowave Devices and Integrated Circuits Department, Institute of Microelectronics of Chinese Academy of Sciences, No. 3, Bei-Tu-Cheng West Road, Beijing 100029, China;
rnBeijing National Laboratory for Condensed Matter Physics, Institute of Physics of Chinese Academy of Sciences, Beijing 100080, China;
rnMicrowave Devices and Integrated Circuits Department, Institute of Microelectronics of Chinese Academy of Sciences, No. 3, Bei-Tu-Cheng West Road, Beijing 100029, China;
AlGaN; ICP etching; XPS; sheet resistance;
机译:电容耦合射频氩等离子体刻蚀p-和n-GaN表面的损伤特性比较
机译:电容耦合射频氦等离子体刻蚀的TiO_2薄膜表面的损伤特性
机译:具有交叉内部振荡电流的低频感应耦合等离子体中的射频功率沉积的磁场和均匀性
机译:氩射频感应耦合等离子体,氮高功率微波诱导等离子体以及氩或氮辉光放电等离子体中激发机理的比较研究
机译:使用能量和高能“快速”电子的密度测量亚稳态原子密度,电子能量分布函数中检测到与射频感应耦合等离子体氦放电产生的余辉等离子体相关的电子能量分布函数
机译:通过电感耦合等离子体(ICP)和器件特性优化准垂直GaN肖特基势垒二极管(SBD)的台面蚀刻
机译:具有交叉内部振荡电流的低频感应耦合等离子体中的射频功率沉积的磁场和均匀性
机译:射频电弧引入电感耦合等离子体的样品。