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Photoluminescence and photoelectrochemical properties of nanocrystalline ZnO thin films synthesized by spray pyrolysis technique

机译:喷雾热解法合成纳米ZnO薄膜的光致发光和光电化学性质

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摘要

A simple and inexpensive spray pyrolysis technique (SPY) was employed for the synthesis of nanocrystalline zinc oxide (ZnO) thin films onto soda lime glass and tin doped indium oxide (ITO) coated glass substrates at different substrate temperatures ranging from 300 °C to 500 °C. The synthesized films were polycrystalline, with a (002) preferential growth along c-axis. SEM micrographs revealed the uniform distribution of spherical grains of about 80-90 nm size. The films were transparent with average visible transmittance of 85% having band gap energy 3.25 eV. All the samples exhibit room temperature photo-luminescence (PL). A strong ultraviolet (UV) emission at 398 nm with weak green emission centered at 520 nm confirmed the less defect density in the samples. Moreover, the samples are photoelectrochem-ically active and exhibit the highest photocurrent of 60 u.A, a photovoltage of 280 mV and 0.23 fill factor (FF) for the Zn45o films in 0.5 M Na2SO4 electrolyte, when illuminated under UV light.
机译:一种简单且便宜的喷雾热解技术(SPY)用于在300至500的不同基板温度下,在钠钙玻璃和掺锡氧化铟(ITO)涂层的玻璃基板上合成纳米晶体氧化锌(ZnO)薄膜。 ℃。合成的薄膜是多晶的,沿c轴优先生长(002)。 SEM显微照片揭示了约80-90nm尺寸的球形晶粒的均匀分布。该膜是透明的,平均可见光透射率为85%,带隙能量为3.25eV。所有样品均显示室温光致发光(PL)。 398 nm处的强紫外线(UV)发射和520 nm处的弱绿色发射证实了样品中的缺陷密度较小。此外,这些样品具有光电化学活性,当在紫外光下照射时,在0.5 M Na2SO4电解质中的Zn45o膜具有60 uA的最高光电流,280 mV的光电压和0.23填充因子(FF)。

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  • 来源
    《Applied Surface Science 》 |2011年第24期| p.10789-10794| 共6页
  • 作者单位

    Thin Film Materials Laboratory, Department of Physics, Shivaji University, Vidyanagar, Kolhapur 416 004, Maharashtra, India;

    Thin Film Materials Laboratory, Department of Physics, Shivaji University, Vidyanagar, Kolhapur 416 004, Maharashtra, India;

    Thin Film Materials Laboratory, Department of Physics, Shivaji University, Vidyanagar, Kolhapur 416 004, Maharashtra, India;

    Thin Film Materials Laboratory, Department of Physics, Shivaji University, Vidyanagar, Kolhapur 416 004, Maharashtra, India;

    Thin Film Materials Laboratory, Department of Physics, Shivaji University, Vidyanagar, Kolhapur 416 004, Maharashtra, India;

    Thin Film Materials Laboratory, Department of Physics, Shivaji University, Vidyanagar, Kolhapur 416 004, Maharashtra, India;

    Thin Film Materials Laboratory, Department of Physics, Shivaji University, Vidyanagar, Kolhapur 416 004, Maharashtra, India;

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  • 正文语种 eng
  • 中图分类
  • 关键词

    zinc oxide thin films x-ray diffraction optical properties photoluminescence;

    机译:氧化锌薄膜X射线衍射光学性质光致发光;

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