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机译:射频磁控溅射法制备CuIn_(1-x)Al_xSe_2薄膜的结构和电学性能
Key Laboratory of Polar Materials and Devices, Ministry of Education, Department of Electronic Engineering, East China Normal University, Shanghai 200241, China;
Laboratory for Microstructures, Shanghai University, 99 Shangda Rd, Shanghai 200444, China;
Key Laboratory of Polar Materials and Devices, Ministry of Education, Department of Electronic Engineering, East China Normal University, Shanghai 200241, China;
Key Laboratory of Polar Materials and Devices, Ministry of Education, Department of Electronic Engineering, East China Normal University, Shanghai 200241, China;
Key Laboratory of Polar Materials and Devices, Ministry of Education, Department of Electronic Engineering, East China Normal University, Shanghai 200241, China;
Key Laboratory of Polar Materials and Devices, Ministry of Education, Department of Electronic Engineering, East China Normal University, Shanghai 200241, China;
Key Laboratory of Polar Materials and Devices, Ministry of Education, Department of Electronic Engineering, East China Normal University, Shanghai 200241, China;
Key Laboratory of Polar Materials and Devices, Ministry of Education, Department of Electronic Engineering, East China Normal University, Shanghai 200241, China;
CuIn_(1-x)Al_xSe_2; Sputtering; Thin film; Interface;
机译:射频磁控溅射制备铟锡氧化物/石英衬底上Ba_xSr_(1-x)TiO_3薄膜的结构和光学性质
机译:射频磁控溅射制备氟掺杂锌锡氧化物薄膜的结构和电性能
机译:两阶段制备的光伏应用CuIn_(1-x)Al_xSe_2薄膜的晶体学性质和元素迁移
机译:RF磁控溅射薄膜光伏制备的氢化多晶锗薄膜的结构和电性能
机译:研究磁控溅射生产的氧化锌基薄膜的结构,电,光和磁性能。
机译:射频磁控溅射制备(MgAl)共掺杂ZnO薄膜的光电性能研究与研究
机译:氮化钽薄膜的结构和电学性能 采用反应射频磁控溅射法制备