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首页> 外文期刊>IEEE Transactions on Applied Superconductivity >Epitaxial growth of YBCO thin films on Al2O3substrates by pulsed laser deposition
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Epitaxial growth of YBCO thin films on Al2O3substrates by pulsed laser deposition

机译:脉冲激光沉积在Al2O3衬底上外延生长YBCO薄膜

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摘要

Superconducting YBa2Cu3O7-δ (YBCO) thin films were deposited on CeO2 buffered Al2 O3 (alumina and sapphire) substrates by pulsed laser deposition. Superconducting properties of the c-axis YBCO films on these substrates were greatly affected by the growth orientation of CeO2 buffer layer. The critical temperature of YBCO film on alumina substrate was ~83 K. In the case of single crystal substrates, the critical temperature of YBCO thin film was ~89.5 K, and the critical current density was 1.5×106 A/cm2 at 77 K
机译:通过脉冲激光沉积将超导YBa2Cu3O7-δ(YBCO)薄膜沉积在CeO2缓冲的Al2 O3(氧化铝和蓝宝石)衬底上。 CeO2缓冲层的生长方向极大地影响了这些基板上c轴YBCO薄膜的超导性能。氧化铝基板上的YBCO薄膜的临界温度为〜83K。在单晶基板上,YBCO薄膜的临界温度为〜89.5 K,在77 K时的临界电流密度为1.5×106 A / cm2

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