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A method for improving nucleation of thick YBCO films in the ex-situ process

机译:在异位过程中改善厚YBCO薄膜成核的方法

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摘要

Some coated conductor applications require a YBCO layer at least 5 μm thick with high Jc. The growth of thick c-axis oriented epitaxial layers using the barium fluoride ex-situ technology is not always possible. Films over 3 μm thick have more undesirable a-oriented and random grains than thinner ones. We present an analysis of thick film nucleation and conclude that thick precursor layers impede out-diffusion of the ex-situ reaction product, HF. High impedance for HF diffusion results in large variations of the chemical potential of the growth reaction and disruption of the nucleation process. We conclude that a solution for c-axis growth is control of the precursor permeability. A method is described for controlling the permeability of precursor layers. Using this technique we were able to grow c-axis oriented 5-μm thick films on oxide-buffered Ni tape with Jc(0 T) = 4 × 105 A/cm2 and Jc(1 T) = 8 × 104 A/cm2.
机译:一些涂层导体应用要求YBCO层至少5μm厚且具有高Jc。使用氟化钡非原位技术生长厚c轴取向的外延层并不总是可能的。厚度超过3μm的薄膜比更薄的薄膜具有更不希望的a取向和无规晶粒。我们提出了对厚膜成核的分析,并得出结论,厚的前体层会阻碍异位反应产物HF的向外扩散。 HF扩散的高阻抗会导致生长反应的化学势发生较大变化,并破坏成核过程。我们得出结论,c轴增长的解决方案是控制前驱体的渗透性。描述了一种用于控制前体层的渗透性的方法。使用该技术,我们能够在氧化物缓冲的Ni带上生长c轴取向5μm厚的膜,其Jc(0 T)= 4×105 A / cm2,Jc(1 T)= 8×104 A / cm2。

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