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首页> 外文期刊>Applied Superconductivity, IEEE Transactions on >Microstructure Analysis of High-Quality Buffer Layers on Textured NiW Tapes for YBCO Coated Conductors
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Microstructure Analysis of High-Quality Buffer Layers on Textured NiW Tapes for YBCO Coated Conductors

机译:YBCO涂层导体的织构NiW带上高质量缓冲层的微观结构分析

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Epitaxial ${rm CeO}_{2}$ seed layer and multiple ${rm CeO}_{2}/{rm YSZ/CeO}_{2}$ buffer layers were in-situ deposited in a reel to reel pulsed laser deposition chamber on rolling assisted biaxially textured NiW tapes. Epitaxial relationship and surface morphology of each layer were systematically studied by x-ray diffraction (XRD), high resolution scanning electron microscope (SEM) and atomic force microscope (AFM). The in-plane texture of ${rm CeO}_{2}$ cap layer is 6–7 degrees, which was comparable to NiW substrate. During deposition parameter optimization, it was observed that the orientations of YBCO layers were related with individual NiW grains. Although c-axis orientation was the dominant orientation of YBCO films under optimum deposition conditions, a small amount of a-axis orientation was observed in YBCO films. These sun-micro scale a-axis orientated YBCO grains were not uniformly distributed in YBCO films, but only located inside a small percentage of NiW grains. SEM observation showed that grain size of buffer layers was sensitive to deposition parameters. The influence of buffer layer grain size and surface roughness on the epitaxial quality of YBCO layers was investigated.
机译:外延$ {rm CeO} _ {2} $种子层和多个$ {rm CeO} _ {2} / {rm YSZ / CeO} _ {2} $缓冲层原位沉积在卷轴式脉冲激光中轧制辅助双轴织构NiW带上的沉积室。通过X射线衍射(XRD),高分辨率扫描电子显微镜(SEM)和原子力显微镜(AFM)系统地研究了各层的外延关系和表面形态。 $ {rm CeO} _ {2} $覆盖层的面内纹理为6–7度,与NiW基板相当。在沉积参数优化过程中,观察到YBCO层的取向与单个NiW晶粒有关。尽管在最佳沉积条件下c轴取向是YBCO膜的主要取向,但在YBCO膜中观察到少量的a轴取向。这些太阳微米级a轴取向的YBCO晶粒在YBCO薄膜中分布不均匀,而仅位于一小部分的NiW晶粒内部。 SEM观察表明,缓冲层的晶粒尺寸对沉积参数敏感。研究了缓冲层晶粒尺寸和表面粗糙度对YBCO层外延质量的影响。

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