Peculiarities of Solar Elements Based on Narrow-Band-Gap Semiconductors

摘要

Ideas concerning the development of solar elements with structures consisting of a p-n junction on a narrow-band-gap semiconductor and a cascade of frontal p-p heterojunctions on wide-band-gap semiconductors, as well as the possibility of multiple generation of electron-hole pairs as the result of acceleration of photoelectrons in the fields of p-p heterojunctions, are proposed. The approximate evaluation of the efficiency of these solar elements shows that they can be more effective than silicon solar elements.