Impurity photovoltaic effect in silicon with multicharge Mn clusters

摘要

A new approach to formation of the impurity energy band is proposed that allows the solar IR spectrum to be utilized to generate the subband photocarriers. The essence of the proposed approach is the control in a wide range of the charge state of the atomic manganese (Mn)4+n nanoclusters in the Si lattice. The creation of the 0.32-eV-wide impurity energy gap based on (Mn)4+nin the Si bandgap is established. [PUBLICATION ABSTRACT]