Carrier tuning and multiple phonon scattering induced high thermoelectric performance in n-type Sb-doped PbTe alloys

摘要

Much progress on highly efficient thermoelectric materials have been made in the p-type PbTe. However, the n-type PbTe only shows a relatively low figure of merit ZT and conversion efficiency , which is urgently required to be strengthened and compatible with p-type counterpart from the viewpoint of large-scale applications. Here, we report that n-type Sb-doped PbTe alloys can directly improve the power factor owing to the optimized carrier concentration. Moreover, the unexpected synergistic effect, deriving from alloying and nano-precipitates scattering due to Sb doping, triggers a dramatic reduction of lattice thermal conductivity. Consequently, a remarkable ZT of 1.3at 673K in n-type Pb0.98Sb0.02Te and the average ZT(ave) of 0.83 with the calculated conversion efficiency of 12.3% in a wide temperature range from 323 to 823 are achieved. The present findings demonstrate the excellent potential in n-type Sb-doped PbTe thermoelectric materials through a synergetic carrier tuning and multiple phonon scattering strategy, which provides a new avenue for exploring high-performance thermoelectric materials in n-type PbTe and/or other materials.