...
首页> 外文期刊>Applied Physics >Asymmetric effect of (0001) and (0001) facets on surface and interface properties of CdS single crystal
【24h】

Asymmetric effect of (0001) and (0001) facets on surface and interface properties of CdS single crystal

机译:(0001)和(0001)面对CdS单晶的表面和界面特性的不对称影响

获取原文
获取原文并翻译 | 示例
   

获取外文期刊封面封底 >>

       

摘要

A different effect of (0001) and (0001) crystal facets of the cadmium sulfide (CdS) wurtzite structure terminated with Cd and S atoms, respectively, was observed in respect to the properties of the crystal surface and interface with metal or organic semiconductor contacts. In addition to the different surface morphology, a bare CdS single crystal showed different features in photoluminescence from the Cd- and S-terminated surfaces. Different adhesive behavior of poly(3,4-ethylenedioxythiophene): poly(styrene sulfonic acid) (PEDOT:PSS) films in respect to the Cd- and S-terminated facets of the crystal has also been found. Photovoltaic properties of hybrid CdS/PEDOT:PSS heterojunc-tions have been shown to be sensitive in respect to the crystal facet used. Thin films of aluminum (Al) equally deposited onto the opposite crystal facets revealed much smaller sheet resistance on the sulfur facet than on the cadmium one, which has been assigned to the difference in both chemical interaction with the surface atoms and surface morphology. Current-voltage characteristics of an apparently symmetric Al/CdS/Al structure with Al electrodes deposited onto the opposite crystal facets showed asymmetric behavior depending on the bias direction applied to the Cd or S-terminated facet, with the barrier for electrons at the Al/S-terminated interface, respectively.
机译:观察到分别以Cd和S原子封端的硫化镉(CdS)纤锌矿结构的(0001)和(0001)晶面在晶体表面和与金属或有机半导体接触的界面方面的不同影响。除了不同的表面形态外,裸露的CdS单晶在以Cd和S端接的表面上显示出不同的光致发光特征。还发现了聚(3,4-乙撑二氧噻吩):聚(苯乙烯磺酸)(PEDOT:PSS)膜相对于晶体的Cd和S端刻面具有不同的粘合行为。杂化CdS / PEDOT:PSS异质结的光伏性能已证明对所使用的晶面敏感。均匀沉积在相对的晶面上的铝(Al)薄膜显示出,硫面上的薄层电阻比镉面上的薄层电阻小得多,这归因于与表面原子的化学相互作用和表面形态的差异。 Al电极沉积在相对的晶面上的表面对称的Al / CdS / Al结构的电流-电压特性根据施加到Cd或S端刻面的偏压方向表现出不对称行为,并且电子在Al /分别为S端接的接口。

著录项

  • 来源
    《Applied Physics》 |2011年第1期|p.493-502|共10页
  • 作者单位

    Institute of Semiconductor Physics, pr. Nauki 45, Kyiv 03028, Ukraine;

    Institute of Physics, pr. Nauki 46, Kyiv 03028, Ukraine;

    Institute of Semiconductor Physics, pr. Nauki 45, Kyiv 03028, Ukraine;

    Institute of Semiconductor Physics, pr. Nauki 45, Kyiv 03028, Ukraine;

  • 收录信息 美国《科学引文索引》(SCI);美国《工程索引》(EI);美国《生物学医学文摘》(MEDLINE);
  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类
  • 关键词

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号