MOCVD of Fe atoms on H/Si(111) surfaces using Fe-phthalocyanine

摘要

Single Fe atoms are deposited on hydrogen-passivated Si(111) surfaces by decomposition of FePc molecules. The metal-organic molecules are evaporated from powder in a heated crucible of an electron beam source. Scanning tunneling microscopy (STM) indicates the incorporation of the central Fe atom of the molecule into H/Si(111) in the near-surface region. This provides a possible precursor state for implantation deeper into the semiconductor substrate.