Wide-bandgap Zn2GeO4 nanowire networks as efficient ultraviolet photodetectors with fast response and recovery time

摘要

Ultraviolet (UV) photodetectors based on ternary Zn2GeO4 nanowire (NW) networks are demonstrated. The devices show fast response and recovery time, which is attributed to the unique NW-NW junction barrier dominated conductance for network devices. The UV-light induced barrier height modulation is much faster than the oxygen adsorption/desorption processes. The wide-band gap Zn2GeO4 NWs also exhibit high wavelength selectivity for deep UV detection. We demonstrate that ternary oxide NW-networks are ideal building blocks for nanoscale photodetectors with superior performance and facile fabrication processes.