Reduced electron back-injection in Al2O3/AlOx/Al2O3/graphene charge-trap memory devices

摘要

A graphene charge-trap memory is devised using a single-layer graphene channel with an Al2O3/AlOx/Al2O3 oxide stack, where the ion-bombarded AlOx layer is intentionally added to create an abundance of charge-trap sites. The low dielectric constant of AlOx compared to Al2O3 reduces the potential drop in the control oxide Al2O3 and suppresses the electron back-injection from the gate to the charge-storage layer, allowing the memory window of the device to be further extended. This shows that the usage of a lower dielectric constant in the charge-storage layer compared to that of the control oxide layer improves the memory performance for graphene charge-trap memories.