Demonstrating 1 nm-oxide-equivalent-thickness HfO2/InSb structure with unpinning Fermi level and low gate leakage current density

摘要

In this work, the band alignment, interface, and electrical characteristics of HfO2/InSb metal-oxide-semiconductor structure have been investigated. By using x-ray photoelectron spectroscopy analysis, the conduction band offset of 1.78 ± 0.1 eV and valence band offset of 3.35 ± 0.1 eV have been extracted. The transmission electron microscopy analysis has shown that HfO2 layer would be a good diffusion barrier for InSb. As a result, 1 nm equivalent-oxide-thickness in the 4 nm HfO2/InSb structure has been demonstrated with unpinning Fermi level and low leakage current of 10-4 A/cm-2. The Dit value of smaller than 1012 eV-1cm-2 has been obtained using conduction method.