Direct graphene synthesis on SiO2/Si substrate by ion implantation

摘要

We present results of few-layer graphene synthesis directly on SiO2/Si substrate by negative carbon ion implantation in Ni catalyst films on the top of SiO2/Si substrate. Negative carbon ions at 20?keV were implanted into Ni films with doses of (4–16) × 1015?cm-2. The implanted carbon atoms dissolved in Ni at an elevated temperature and diffused towards both sides of the Ni film. After annealing, graphene layers were observed on top of the Ni surface and on SiO2 beneath the Ni film. Formation of graphene layers directly on insulating substrates was achieved by etching the top Ni layer.