首页> 外文期刊>Applied Physics Letters >Dramatic enhancement of fullerene anion formation in polymer solar cells by thermal annealing: Direct observation by electron spin resonance
【24h】

Dramatic enhancement of fullerene anion formation in polymer solar cells by thermal annealing: Direct observation by electron spin resonance

机译:通过热退火显着增强聚合物太阳能电池中富勒烯阴离子的形成:通过电子自旋共振直接观察

获取原文
获取原文并翻译 | 示例
       

摘要

Using electron spin resonance (ESR), we clarified the origin of the efficiency degradation of polymer solar cells containing a lithium-fluoride (LiF) buffer layer created by a thermal annealing process after the deposition of an Al electrode (post-annealing). The device structure was indium-tin-oxide/ poly(3,4-ethylenedioxythiophene):poly(4-styrenesulfonate)/poly(3-hexylthiophene):phenyl-C61-butyric acid methyl ester (P3HT:PCBM)/LiF/Al. Three samples consisting of quartz/P3HT:PCBM/LiF/Al, quartz/P3HT:PCBM/Al, and quartz/PCBM/LiF/Al were investigated and compared. A clear ESR signal from radical anions on the PCBM was observed after LiF/Al was deposited onto a P3HT:PCBM layer because of charge transfer at the interface between the PCBM and the LiF/Al, which indicated the formation of PCBM−Li+ complexes. The number of radical anions on the PCBM was enhanced remarkably by the post-annealing process; this enhancement was caused by the surface segregation of PCBM and by the dissociation of LiF at the Al interface by the post-annealing process. The formation of a greater number of anions enhanced the electron scattering, decreased the electron-transport properties of the PCBM molecules, and caused an energy-level shift at the interface. These effects led to degradation in the device performance.
机译:使用电子自旋共振(ESR),我们阐明了包含氟化锂(LiF)缓冲层的聚合物太阳能电池效率降低的根源,该缓冲层是由铝电极沉积(退火后)之后的热退火过程产生的。器件结构为氧化铟锡/聚(3,4-乙撑二氧噻吩):聚(4-苯乙烯磺酸盐)/聚(3-己基噻吩):苯基-C61-丁酸甲酯(P3HT:PCBM)/ LiF / Al 。研究并比较了由石英/ P3HT:PCBM / LiF / Al,石英/ P3HT:PCBM / Al和石英/ PCBM / LiF / Al组成的三个样品。 LiF / Al沉积到P3HT:PCBM层上之后,由于在PCBM和LiF / Al之间的界面上发生了电荷转移,因此在PCBM上观察到了清晰的ESR信号,这表明PCBM - Li + 复合物。通过后退火工艺,PCBM上的自由基阴离子数量显着增加。这种增强是由于PCBM的表面偏析以及后退火过程在Al界面处LiF的解离所致。大量阴离子的形成增强了电子散射,降低了PCBM分子的电子传输性能,并在界面处引起了能级偏移。这些影响导致器件性能下降。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号